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EC2612
40GHz Super Low Noise PHEMT
Pseudomorphic High Electron Mobility Transistor Description
The EC2612 is based on a 0.15m gate pseudomorphic high electron mobility transistor (0.15m PHEMT) technology. Gate width is 120m and the 0.15m T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection.Only gate and drain wires bounding are required. | Chip size : 0.63 x 0.37 x 0.1 mm
Main Features
| 0.8dB minimum noise figure @ 18GHz | 1.5dB minimum noise figure @ 40GHz | 12dB associated gain @ 18GHz | 9.5dB associated gain @ 40GHz D: Drain G: Gate S: Source
Main Characteristics
Tamb = +25C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure (F=40GHz) Associated gain (F=40GHz) 8 Min 10 Typ 40 1.5 9.5 Max 60 1.9 Unit mA dB dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Electrical Characteristics
Tamb = +25C
Ref. : DSEC26120077 -17-Marc-00 1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
EC2612
Symbol Idss Parameter Saturated drain current
40GHz Super Low Noise PHEMT
Test Conditions Vds = 2V Vgs = 0V Vds = 2V Ids = 0.1mA Vds = 2V Ids = 25mA Vgsd = -2V Min 10 Typ 35 Max 60 Unit mA
Vp
Pinch off voltage
-1.0
-0.7
-0.3
V
Gm
Transconductance
50
70
mS
Igsd
Gate to source/drain leakage current
5
A
Dynamic characteristics
Tamb=25C Symbol Parameter Test Conditions F= 12GHz NF Minimum noise figure Vds=2V Ids=Idss/3 Ga Associated Gain F= 30GHz F= 40GHz F= 12GHz F= 30GHz F= 40GHz 13 9 8 Min Typ. 0.5 1.3 1.5 14 10 9.5 dB Max 0.7 1.7 1.9 dB dB Unit dB
Absolute Maximum Ratings (1)
Tamb = +25C Symbol Vds Vgs Pt Tch Tstg Parameter Drain to source voltage Gate to source voltage Total power dissipation Operating channel temperature Storage temperature range Values 3.5 -2.5 280 +175 -55 to +175 Units V V mW C C
(1) Operation of this device above any one of these parameters may cause permanent damage
Ref. : DSEC26120077 -17-Marc-00
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
Typical Scattering Parameters
Tamb = +25C "S" Parameters, including Lg=Ld~0.15nH Vds = 3V, Ids = 30mA Freq. GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 dB -0,14 -0,19 -0,35 -0,62 -0,89 -1,12 -1,39 -1,70 -1,96 -2,15 -2,34 -2,47 -2,62 -2,78 -2,91 -3,00 -3,05 -3,08 -3,13 -3,17 -3,24 -3,26 -3,30 -3,27 -3,26 -3,20 -3,17 -3,15 -3,19 -3,15 -3,10 -3,03 -2,99 -2,98 -2,97 -2,89 -2,85 -2,83 -2,82 -2,83 S11 / -11,0 -21,6 -32,3 -42,5 -52,5 -62,2 -71,9 -80,5 -88,2 -95,9 -104,1 -111,8 -118,7 -125,5 -132,8 -138,8 -144,2 -150,1 -156,5 -161,6 -166,5 -171,9 -176,7 179,3 175,8 172,0 167,4 163,5 159,2 155,1 151,2 147,7 144,1 139,8 136,5 132,3 128,2 124,9 121,6 116,9 S12 dB -34,26 -28,41 -25,12 -22,92 -21,36 -20,14 -19,30 -18,69 -18,10 -17,61 -17,23 -16,88 -16,56 -16,35 -16,23 -16,11 -15,89 -15,79 -15,82 -15,77 -15,80 -15,90 -16,00 -15,96 -16,06 -16,12 -16,14 -16,16 -16,36 -16,39 -16,29 -16,37 -16,54 -16,62 -16,74 -16,88 -16,84 -16,86 -17,04 -17,11 S12 / 81,5 76,1 70,0 64,0 58,1 52,2 46,4 42,0 38,0 33,5 29,4 25,8 22,1 18,7 15,4 12,9 10,0 6,7 4,1 1,5 -2,0 -4,8 -6,9 -9,8 -12,6 -14,9 -17,2 -20,0 -22,2 -23,1 -24,9 -27,5 -28,8 -30,6 -32,6 -34,5 -36,4 -39,7 -43,4 -46,0 S21 dB 15,88 15,69 15,48 15,20 14,87 14,53 14,16 13,74 13,34 12,96 12,57 12,23 11,83 11,40 11,02 10,60 10,24 9,86 9,49 9,14 8,75 8,40 8,02 7,68 7,39 7,12 6,86 6,62 6,28 5,98 5,70 5,40 5,12 4,89 4,68 4,51 4,24 4,04 3,84 3,47 S21 / 169,7 162,2 154,5 146,7 139,3 132,3 125,7 119,5 113,9 108,3 103,0 97,6 92,4 87,4 82,5 78,1 73,7 69,5 65,2 61,2 57,2 53,3 50,0 46,8 43,6 40,4 37,1 33,4 29,7 26,5 23,1 19,5 16,7 13,4 10,1 6,4 3,0 -0,7 -4,4 -8,6
EC2612
S22 dB -4,78 -4,89 -5,11 -5,39 -5,80 -6,19 -6,67 -7,07 -7,38 -7,69 -8,04 -8,30 -8,55 -8,85 -9,03 -9,20 -9,29 -9,28 -9,34 -9,38 -9,45 -9,47 -9,50 -9,43 -9,31 -9,20 -9,13 -9,06 -8,95 -8,81 -8,67 -8,59 -8,45 -8,38 -8,34 -8,26 -8,10 -7,89 -7,77 -7,71
S22 / -8,8 -18,3 -27,2 -36,0 -44,4 -53,5 -61,5 -68,5 -75,6 -83,2 -90,1 -96,9 -104,7 -111,9 -118,3 -123,8 -130,8 -137,3 -143,2 -148,9 -155,9 -160,6 -164,8 -169,2 -174,6 -177,9 177,8 173,5 168,4 166,0 161,3 155,5 152,7 150,0 145,6 141,4 138,3 133,7 129,7 127,3
Tamb = +25C
Ref. : DSEC26120077 -17-Marc-00 3/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
EC2612
"S" Parameters, including Lg=Ld~0.15nH Vds = 2V, Ids = 10mA Freq. GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 dB -0,11 -0,26 -0,45 -0,66 -0,85 -1,03 -1,20 -1,41 -1,64 -1,85 -2,04 -2,19 -2,35 -2,51 -2,66 -2,78 -2,86 -2,92 -3,00 -3,08 -3,15 -3,20 -3,23 -3,25 -3,26 -3,27 -3,27 -3,26 -3,25 -3,21 -3,18 -3,13 -3,09 -3,07 -3,03 -3,00 -2,98 -2,97 -2,94 -2,93 S11 / -10,5 -20,7 -29,8 -38,4 -47,7 -56,5 -65,7 -73,9 -81,2 -88,7 -96,7 -104,2 -111,0 -117,8 -125,3 -131,4 -136,9 -142,9 -149,4 -154,6 -159,8 -165,3 -170,4 -174,7 -178,3 177,7 173,0 169,0 164,6 160,2 156,1 152,5 148,6 144,3 140,9 136,6 132,1 128,6 125,3 120,6 S12 dB -33,67 -27,77 -24,45 -22,20 -20,57 -19,27 -18,36 -17,68 -17,04 -16,49 -16,08 -15,69 -15,33 -15,09 -14,94 -14,82 -14,57 -14,47 -14,48 -14,41 -14,41 -14,50 -14,60 -14,56 -14,65 -14,71 -14,72 -14,74 -14,93 -15,00 -14,93 -15,01 -15,21 -15,27 -15,31 -15,48 -15,49 -15,53 -15,77 -15,86
40GHz Super Low Noise PHEMT
S12 / 82,3 77,0 71,2 65,4 59,6 53,7 47,9 43,3 39,2 34,5 30,1 26,3 22,3 18,5 14,9 12,0 8,9 5,3 2,3 -0,5 -4,3 -7,5 -9,8 -12,9 -16,0 -18,5 -21,1 -24,0 -26,6 -27,9 -30,1 -33,0 -34,6 -36,7 -39,8 -42,0 -44,1 -47,7 -50,7 -53,4
S21 dB 13,52 13,38 13,22 13,01 12,74 12,48 12,19 11,85 11,51 11,19 10,85 10,56 10,22 9,82 9,49 9,12 8,78 8,43 8,08 7,76 7,40 7,07 6,72 6,38 6,10 5,83 5,57 5,34 5,03 4,73 4,47 4,18 3,91 3,69 3,49 3,33 3,07 2,89 2,67 2,33
S21 / 170,6 163,7 156,4 149,0 141,8 135,0 128,5 122,4 116,7 111,0 105,6 100,1 94,7 89,6 84,5 79,9 75,2 70,9 66,4 62,2 58,0 54,0 50,4 47,1 43,6 40,3 36,8 33,1 29,3 26,0 22,4 18,6 15,8 12,3 9,0 5,2 1,7 -2,2 -6,0 -10,2
S22 dB -4,76 -4,81 -4,99 -5,21 -5,56 -5,88 -6,29 -6,65 -6,91 -7,19 -7,53 -7,78 -8,03 -8,34 -8,49 -8,67 -8,82 -8,91 -9,02 -9,07 -9,18 -9,27 -9,29 -9,27 -9,22 -9,16 -9,08 -9,05 -8,91 -8,80 -8,67 -8,58 -8,49 -8,39 -8,30 -8,20 -8,08 -7,95 -7,86 -7,78
S22 / -7,4 -16,4 -24,5 -32,6 -40,5 -49,0 -56,6 -63,3 -70,0 -77,4 -84,0 -90,6 -98,0 -105,2 -111,6 -117,1 -124,0 -130,5 -136,3 -141,9 -149,1 -154,0 -158,4 -162,8 -168,4 -171,9 -176,3 179,2 174,0 171,5 166,5 160,6 157,5 154,9 151,3 146,8 143,3 138,6 133,6 131,3
Ref. : DSEC26120077 -17-Marc-00
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
Typical results
Tamb = +25C
Ids vs Vds (Vgs=-0.2V/Step)
70 Vgs=0.4V 60 50
EC2612
Ids (mA)
40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5
Vds (V)
Nf and Associated Gain Vs Ids (F=12GHz)
1,00 16
0,90
15
0,80
14
0,70
13
0,60
12
0,50
11
0,40 4 9 14 19 24 29 34 39
10
Ids (mA)
Vds = 2V
NF and Associated Gain vs Ids (F=40GHz)
2,40 10
2,20
9,5
2,00
9
1,80
8,5
1,60
8
1,40
7,5
1,20 0 5 10 15 20 25 30 35 40
7
Ids (mA)
Vds=2V
Ref. : DSEC26120077 -17-Marc-00 5/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Ga (dB)
NF (dB)
Ga (dB)
NF (dB)
EC2612
40GHz Super Low Noise PHEMT
NF and Associated Gain vs F (Ids=Idss/3)
1,60 1,40 1,20
26 23 20 17 14 11 8 5 5 10 15 20 25 30 35 40
1,00 0,80 0,60 0,40 0,20
Frequency (GHz)
Vds=2V
F=12GHz
16,00 15,00 14,00 30, 13,00 20, 12,00 11,00 10,00 0,0 2,0 4,0 6,0 8,0 10,0 12,0 14,0 16,0 10, 50,
Associated gain (dB)
40,
0, 18,0
Pout (dBm)
Vds = 3V, Ids = 31mA
Ref. : DSEC26120077 -17-Marc-00
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Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Power added efficiency (%)
Ga (dB)
NF (dB)
40GHz Super Low Noise PHEMT
EC2612
(CHIP) Equivalent Circuit model (Drain and Gate bond wires included)
Parameter Lg Rg Cgs Ri Cgd Rs Ls Gm Tau Cds Rds Rd Ld Unit pH Ohms fF Ohms fF Ohms pH mS ps fF Ohms Ohms pH Value 152.54 0.13 142.6 3.2 39.57 2.83 0.11 98.14 2.8 46.84 116.8 2.83 117.01
G
Lg
Rg
Cg d
Rd
Ld
D
Cg s Vg s Ri Ta u Gm Rd s Cds
Rs
Ls S backside of substrate
Typical Noise Parameters at Vds=2V, Ids=14mA (Drain and Gate bond wires included)
FREQUENCY MHz 5000 8000 12000 15000 20000 24000 28000 30000 32000 35000 38000 40000 42000 45000 NF min dB 0.26 0.356 0.492 0.595 0.762 0.892 1.01 1.07 1.137 1.223 1.307 1.362 1.415 1.493 opt MOD. 0.811 0.746 0.658 0.598 0.514 0.473 0.460 0.465 0.475 0.5 0.533 0.556 0.581 0.618 Rn Ang.() 19.888 32.28 49.899 64.263 91.037 114.916 139.673 151.723 163.219 179.087 -166.857 -158.467 -150.795 -140.488 14.089 13.33 11.87 10.51 7.965 5.923 4.16 3.473 2.966 2.63 2.923 3.538 4.536 6.843
Ref. : DSEC26120077 -17-Marc-00
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
EC2612
Chip Mechanical Data
40GHz Super Low Noise PHEMT
Drain area= 60*60 m Gate area = 60*60 m Thickness = 100 m
Recommended die attach :
Stage temperature = 300C (minimize temp. and time whenever possible) Preforms = Au/Sn (80/20) Atmosphere : dry nitrogen or forming gas flow
Recommended bonding :
18 m very pure gold wire (thermal compression) The bonder should be properly grounded dimensions in m Source pads are directly connected to back face metallization through the via holes
Ordering Information
Chip form : EC2612-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSEC26120077 -17-Marc-00
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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